2011

Riddet, C., Alexander, C. , Brown, A. , Roy, S. , and Asenov, A. (2011) Simulation of "ab initio" quantum confinement scattering in UTB MOSFETs using three-dimensional ensemble Monte Carlo. IEEE Transactions on Electron Devices, 58 (3). pp. 600-608. ISSN 0018-9383 (doi:10.1109/TED.2010.2095422)

2010

Kovac, U., Alexander, C. , and Asenov, A. (2010) Statistical Estimation of Electrostatic and Transport Contributions to device Parameter Variation. In: 14th International Workshop on Computational Electronics, 27-29 October 2010.

Kovac, U., Alexander, C. , Roy, G. , Cheng, B. , and Asenov, A. (2010) Compact Model Extraction from Quantum Corrected Statistical Monte Carlo Simulation of Random Dopant Induced Drain Current Variability. In: 8th International Conference on Advanced Semiconductor Devices and Microsystems, 25-27 Oct 2010. (In Press)

Kovac, U., Alexander, C. , Roy, G. , Riddet, C. , Cheng, B.J. , and Asenov, A. (2010) Hierarchical Simulation of Statistical Variability: From 3-D MC With "ab initio" Ionized Impurity Scattering to Statistical Compact Models. IEEE Transactions on Electron Devices, 57 (10). pp. 2418-2426. ISSN 0018-9383 (doi:10.1109/TED.2010.2062517)

2009

Palestri, P. et al. (2009) A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs. Solid-State Electronics, 53 (12). pp. 1293-1302. ISSN 0038-1101 (doi:10.1016/j.sse.2009.09.019)

Alexander, C., Kovac, U. , Roy, G. , Roy, S. , and Asenov, A. (2009) A unified density gradient approach to 'ab-initio' ionized impurity scattering in 3D MC simulations of nano-CMOS variability. In: Ultimate Integration of Silicon: ULIS 2009, 18-20 Mar 2009, Aachen, Germany.

Asenov, A., Brown, A. , Roy, G. , Cheng, B. , Alexander, C. , Riddet, C. , Kovac, U. , Martinez, A. , Seoane, N., and Roy, S. (2009) Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green's function techniques. Journal of Computational Electronics, 8 (3-4). pp. 349-373. ISSN 1569-8025 (doi:10.1007/s10825-009-0292-0)

2008

Asenov, A. et al. (2008) Advanced simulation of statistical variability and reliability in nano CMOS transistors. In: IEDM 2008. IEEE International Electron Devices Meeting, 2008, 15-17 Dec 2008 , San Francisco, CA.

2006

Alexander, C, Roy, G , and Asenov, A (2006) Increased intrinsic parameter fluctuations through ab initio Monte Carlo simulations in nano-scaled MOSFETs. In: International Electron Devices Meeting 2006, IEDM, San Fransisco, CA, USA.

Asenov, A, Brown, AR , Roy, G , Alexander, C , and Martinez, A (2006) Simulation of Atomic Scale Effects and Fluctuations in nano-scale CMOS. In: International Conference on Solid State Devices and Materials. (SSDM 2006)., Yokohama,Japan.

Riddet, C, Brown, AR , Alexander, C , Roy, S , and Asenov, A (2006) Efficient density gradient quantum corrections for 3D Monte Carlo simulations. In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2006, California,USA.

2005

Riddet, C, Brown, AR , Alexander, C , Watling, JR , Roy, S , and Asenov, A (2005) Impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs. In: Silicon Nanoelectronics Workshop 2005, Kyoto, Japan.

Watling, JR, Brown, AR , Alexander, C , Ferrari, G, Barker, JR , Bersuker, G, Zeitzoff, P, and Asenov, A (2005) Electrostatic and transport variations in nano CMOS devices due to variations in high-k oxides. In: 2nd International Workshop on Advanced Gate Stack Technology, Texas, USA.

2004

Alexander, C, Brown, AR , Watling, JR , and Asenov, A (2004) Impact of single charge trapping in nano-MOSFETs. In: IEEE 2004 Silicon Nanoelectronics Workshop, Honolulu.

Alexander, C, Brown, AR , Watling, JR , and Asenov, A (2004) Impact scattering in 'atomistic' device simulation. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium.

Alexander, C, Brown, AR , Watling, JR , and Asenov, A (2004) Impact scattering on random dopant induced current fluctuations in devanano MOSFETs. In: Simulation of Semiconductor Processes and Devices, Munich, Germany.

Asenov, A, Roy, G , Alexander, C , Brown, AR , Watling, JR , and Roy, S (2004) Quantum mechanical and transport effects in resolving discrete charges in nano-CMOS device simulation. In: 4th IEEE Conference on Nanotechnology 2004, Munich, Germany.

Riddet, C, Brown, AR , Alexander, C , Watling, JR , Roy, S , and Asenov, A (2004) Scattering from body thickness fluctuations in double gate MOSFETs. An ab initio Monte Carlo simulation study. In: International workshop on Computational Electronics, IWCE-10, West Lafayette, USA.

2003

Alexander, C, Watling, JR , and Asenov, A (2003) Artificial carrier heating due to the introduction of ab-initio Coulomb scattering in Monte Carlo simulations. In: NPMS-6/SIMD-4 Sixth International Conference on New Phenomena in Mesoscopic Systems, and Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, Hawaii, Maui, Hawaii.

Alexander, C, Watling, JR , and Asenov, A (2003) Mobility variations in ultra-small devices due to discrete device simulation. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy.

Alexander, C, Watling, JR , and Asenov, A (2003) Small volume mobility variations due to ionised impurity scattering. In: 13th International Conference on Nonequilibrium Carrier Dynamics - HCIS 13, Modena, Italy.