Silicon Carbide Bonding
Issued: Mon, 15 Nov 2010 13:46:00 GMT
A novel, patent protected method of bonding silicon carbide has been developed at the University of Glasgow.
The method was originally developed for space technologies but its unique advantages make it extremely attractive for a number of other applications.
The patent covers a novel method for bonding silicon carbide components to themselves and to other materials. The bond is achieved through three simple steps:
- Forming a layer of silica on the silicon carbide surface to provide a bonding surface
- Applying a bonding solution including hydroxide ions to the bonding surface of at least one of the parts
- Positioning the parts or the bonding surfaces so that a bond can be formed between them
The method can be used to bond silicon carbide to itself or to components made of other materials including but not restricted to: sapphire, alumina based materials, ULE, zerodur, aluminium, silicon and zinc.
Key Benefits
- Hydroxide bonding offers many advantages over traditional methods
- Bonding is achieved at room temperature avoiding any thermal stresses
- The bond is very stable and vanishingly thin, which is a major benefit for applications where the ‘vertical alignment’ can be achieved by manufacturing intolerances of the components in combination with the very thin, uniform layer
- Hydroxide bonds are compatible with high vacuum applications, offer reliable and reproducible bonds and allow for fine adjustment of components before joining
Applications
- high precision alignment and bonding of SiC components
- high vacuum compatible bonding of SiC
- high strength, low mechanical loss bonds
- ground and space-based applications
- semiconductors
- astronomical instruments
IP status
- EP1737802 (granted patent).
This technology is available as an Easy Access licence deal to companies and individuals.
Find out more
For more information on this technology, please contact Louise O'Neill or call +44 (0)141 330 2730